MJE13003 - NPN Silicon Power Transistors

SEMTECH

Download the MJE13003 datasheet PDF. This datasheet also covers the MJE13002 variant, as both devices belong to the same npn silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

Reverse Biased SOA with Inductive Loads TC=100oC.
Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC.
tc @ 1A, 100oC is 290 ns (Typ).
700V Blocking Capability.
SOA and Switching.

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MJE13003 npn silicon power transistors by SEMTECH - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MJE13002-SEMTECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MJE13003
Manufacturer	SEMTECH
File Size	187.16 KB
Description	NPN Silicon Power Transistors
Datasheet	MJE13003 Datasheet

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Other Datasheets by SEMTECH

Part Number	Description
MJE13002	NPN Silicon Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads TC=100oC • Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC • tc @ 1A, 100oC is 290 ns (Typ). • 700V Blocking Capability • SOA and Switching Applications Information.