Datasheet Details
| Part number | MJE13002 |
|---|---|
| Manufacturer | CDIL |
| File Size | 167.29 KB |
| Description | (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS |
| Datasheet | MJE13002_CDIL.pdf |
|
|
Overview: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control.
| Part number | MJE13002 |
|---|---|
| Manufacturer | CDIL |
| File Size | 167.29 KB |
| Description | (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS |
| Datasheet | MJE13002_CDIL.pdf |
|
|
|
Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 3.12 89 275 ºC/W ºC/W ºC Rth (j-a) Junction to Ambient in free air Maximum Load Temperature for TL Soldering Purposes 1/8" from Case for 5 Seconds *Pulse Test: Pulse Width=5ms, Duty Cycle<10% ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage **VCEO(sus) IC=10mA, IB=0 MJE13002 MJE13003 VCEV=Rated Value, VBE(off)=1.5V VCEV=Rated Value, VBE(off)=1.5V,Tc=100ºC VEB=9V, IC=0 SYMBOL VCEO(sus) VCEV VEBO IC *ICM IB *IBM IE *IEM PD PD Tj, Tstg MJE13002 300 600 9.0 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11.2 40 320 - 65 to 150 MJE13003 400 700 UNIT V V V A A A A A A W mW/ ºC W mW/ ºC ºC MIN 300 400 TYP MAX UNIT V V Collector Cuttoff Current ICEV 1.0 5.0 1.0 mA mA mA Emitter Cuttoff Current IEBO Continental Device India Limited Data Sheet Page 1 of 4 Free Datasheet http://www.datasheet4u.com/ NPN SILICON POWER TRANSISTORS MJE13002 MJE13003 TO126 Plastic Package ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION **hFE IC=0.5A, VCE=2V DC Current Gain IC=1A,VCE=2V Collector Emitter Saturation Voltage **VCE(sat) IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A o IC=1A, IB=0.25A,TC=100 C IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1A, IB=0.25A,TC=100oC MIN 8 5 TYP MAX 40 25 0.5 1.0 3.0 1.0
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJE13002 | 1.5 AMPERE NPN SILICON POWER TRANSISTORS | Motorola |
 |
MJE13002 | NPN Silicon Power Transistors | SEMTECH |
 |
MJE13002 | High Voltage Fast-Switching NPN Power Transistor | SEMIWELL |
 |
MJE13002 | NPN SILICON POWER TRANSISTOR | UTC |
 |
MJE13002 | NPN Silicon Plastic-Encapsulate Transistor | MCC |
| Part Number | Description |
|---|---|
| MJE13003 | (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS |
| MJE13004 | NPN PLASTIC POWER TRANSISTORS |
| MJE13005 | NPN PLASTIC POWER TRANSISTORS |
| MJE13006 | NPN PLASTIC POWER TRANSISTORS |
| MJE13007 | NPN PLASTIC POWER TRANSISTORS |
| MJE15028 | NPN PLASTIC POWER TRANSISTORS |
| MJE15029 | PNP PLASTIC POWER TRANSISTORS |
| MJE15030 | NPN PLASTIC POWER TRANSISTORS |
| MJE15031 | PNP PLASTIC POWER TRANSISTORS |
| MJE15032 | SILICON EPITAXIAL POWER TRANSISTORS |