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MJE13007A - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ IC= 5.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in high-voltage, high-speed.

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isc Silicon NPN Power Transistor MJE13007A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed.