MJE13007A Datasheet

The MJE13007A is a SILICON NPN SWITCHING TRANSISTOR.

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Part NumberMJE13007A
ManufacturerSTMicroelectronics
Overview The MJE13007A is silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. They are inteded for use in motor control, switching regulators etc. 3 1 2 TO-220 INTERNAL. RICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEV V CE = rated V CEV V EB = 9 V I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A IB IB IB IB = = = .
Part NumberMJE13007A
DescriptionSilicon NPN Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable . TICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A VCE(sat)-3 Collector-Emitter Sa.