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MJE13005F Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor.

General Description

·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.6(Max) @ IC= 2.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 2.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage VALUE 700 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 9 IC Collector Current-Continuous 4 ICM Collector Current-peak 8 IB Base Current 2 IBM Base Current-Peak 4 IE Emitter Current 6 IEM Emitter Current-Peak Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature 12 2 75 150 Tstg Storage Temperature Range

MJE13005F Distributor