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MJE13005F - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 0.6(Max) @ IC= 2.0A Switching Time : tf= 0.9μs(Max.)@ IC= 2.0A APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they a

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.6(Max) @ IC= 2.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 2.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.