| Part Number | Description | Manufacture |
|---|---|---|
|
|
8-Bit High-Speed Serial I/O A/D Converters n Serial digital data link requires few I/O pins n Analog input track/hold function n 2-, 4-, or 8-channel input multiplexer options with address logic n 0V to 5V analog input range with single 5V power supply n No zero or full scale adjustment requi |
 National Semiconductor |
|
|
High Temperature Silicon Carbide Power Schottky Diode 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behav |
 GeneSiC |
|
|
Smart Card Interface and benefits Integrated circuit smart card interface in an SO16 package 5 V or 3 V smart card supply One protected half-duplex bidirectional buffered I/O line (C7) VCC regulation: 5 V 5 % or 3 V 5 % using two low ESR multilayer ceramic |
 NXP |
|
|
6-CH Motor Driver • • • • • • • • 5-CH balanced transformerless (BTL) driver 1-CH (forward-reverse) control DC motor driver Operating supply voltage (4.5 V ~ 13.2 V) Built-in thermal shut down circuit (TSD) Built-in channel mute circuit Built-in power save mode circui |
 Fairchild Semiconductor |
|
|
Smart Card Interface and benefits Integrated circuit smart card interface in an SO16 package 5 V or 3 V smart card supply One protected half-duplex bidirectional buffered I/O line (C7) VCC regulation: 5 V 5 % or 3 V 5 % using two low ESR multilayer ceramic |
NXP |
|
|
Low power smart card interface and benefits Integrated circuit smart card interface in an HVQFN24 package 5 V, 3 V or 1.8 V smart card supply Very low power consumption in Deep Shutdown mode Three protected half-duplex bidirectional buffered I/O lines (C4, C7 and C8) VCC |
NXP |
|
|
Op Amps FET input amplifier 1 pA typical input bias current Very low cost High speed 80 MHz, −3 dB bandwidth (G = +1) 80 V/μs slew rate (G = +2) Low noise 11 nV/√Hz (f = 100 kHz) 0.7 fA/√Hz (f = 100 kHz) Wide supply voltage range: 5 V to 24 V Low offset volt |
 Analog Devices |
|
|
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER qBasic machine-language instructions ...................................... 71 qMinimum instruction execution time ................................ 0.24 µs (at 16.8 MHz oscillation frequency) qMemory size ROM ......................................... |
 Renesas |
|
|
N-Channel Enhancement Mode MOSFET VDS 30V VGS ±20V RDSon TYP 24mR@10V 27mR@4V5 ID 10A General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications |
 AFSEMI |
|
|
Thick Film/ Resistor Array • Convex terminal array with square corners • 4 or 8 terminal package with isolated resistors • Single component reduces board space and component counts • Automatic placement capability • Wave and solder paste reflow compatible • Thick film resistan |
 Vishay Siliconix |
| Total 29 results |
