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k10a60w-replacement

k10a60w-replacement dataSheet

Toshiba Semiconductor

K10A60W - Silicon N-Channel MOSFET

 · 88 Hits (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhanc...
Toshiba

K10A60D - N-Channel MOSFET

 · 72 Hits y under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product ...
Toshiba

K10A60DR - N-Channel MOSFET

 · 27 Hits y under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product ...
Toshiba

TK10A60DR - N-Channel MOSFET

 · 12 Hits ...
Toshiba

TK10A60D - N-Channel MOSFET

 · 10 Hits y loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease ...
INCHANGE

TK10A60D5 - N-Channel MOSFET

 · 9 Hits ·Low drain-source on-resistance: RDS(on) = 0.8Ω (typ.) ·Enhancement mode: Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot...
Toshiba Semiconductor

TK10A60W5 - Silicon N-Channel MOSFET

 · 6 Hits (1) (2) (3) (4) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Struc...
INCHANGE

TK10A60W - N-Channel MOSFET

 · 6 Hits ·Low drain-source on-resistance: RDS(ON) = 0.38Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.5 mA) ·100% av...
INCHANGE

TK10A60D - N-Channel MOSFET

 · 5 Hits ·Low drain-source on-resistance: RDS(ON) = 0.58Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lo...
INCHANGE

TK10A60W5 - N-Channel MOSFET

 · 5 Hits ·Low drain-source on-resistance: RDS(ON) = 0.45Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.5 mA) ·100% aval...
Toshiba

TK10A60D5 - Silicon N-Channel MOSFET

 · 5 Hits (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.) (3) High forward tr...
Toshiba Semiconductor

TK10A60W - Silicon N-Channel MOSFET

 · 4 Hits (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhanc...
Toshiba Semiconductor

TK10A60E - MOSFETs

 · 2 Hits (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mod...
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