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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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ESMT Flash FEATURES Single supply voltage 2.3~3.6V Standard, Dual SPI Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MH

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INTEGRATED CIRCUITS DIVISION Features • Reliable Half-Duplex (HDX) Low Frequency (LF) Communications Format • 64 Bits For Data / Identification Storag

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'-'cammadare ~ aerniconduCl:Dr group ~~@@ MPS 2364 STATIC READ ONLY MEMORY (8192x8) L______~__~__ATI_C_R_B_m_O_NL_y_M_EM_O_~_(~81_~~)____~ DESCRIPT

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TOSHIBA MOS MEMORY PRODUCT 32,768 WORD X 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY TC57256D-20 TC57256D-25 SILICON STAC

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ESMT Flash F25L04PA 3V Only 4 Mbit Serial Flash Memory with Dual Output  FEATURES  Single supply voltage 2.3~3.6V  Standard, Dual SPI  Speed - R

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ESMT Flash F25L04PA 3V Only 4 Mbit Serial Flash Memory with Dual Output  FEATURES  Single supply voltage 2.3~3.6V  Standard, Dual SPI  Speed - R

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ESMT Flash F25L04PA 3V Only 4 Mbit Serial Flash Memory with Dual Output  FEATURES  Single supply voltage 2.3~3.6V  Standard, Dual SPI  Speed - R

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ESMT Flash „ FEATURES y Single supply voltage 2.3~3.6V y Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MH

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ESMT Flash „ FEATURES y Single supply voltage 2.7~3.6V y Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MH

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ESMT Flash FEATURES Single supply voltage 2.3~3.6V Standard, Dual SPI Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MH

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • •

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Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram (Erase an

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns • Internal Program Control and Timer • 8K bytes Boot Bl

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