| Part Number | Description | Manufacture |
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2 GBIT (256M x 8 BIT) CMOS NAND E2PROM Organization Memory cell array Register Page size Block size x8 2176 128K 8 2176 8 2176 bytes (128K 8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi P |
 Toshiba |
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2G-BIT (256M x 8 BIT) CMOS NAND E2PROM |
Toshiba |
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2-GBit CMOS NAND EPROM • Organization Memory cell array Register Page size Block size • • TC58NVG1S3B 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes TC58NVG1S8B 1056 × 128K × 16 1056 × 16 1056 words (64K + 2K) words TC58NVG1S3BFT00/TC58NVG1S8BFT00 The TC58NVG1SxB |
Toshiba |
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(TC58NVG1S3BFT00) 2 GBit CMOS NAND EPROM • Organization Memory cell array Register Page size Block size • • TC58NVG1S3B 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes TC58NVG1S8B 1056 × 128K × 16 1056 × 16 1056 words (64K + 2K) words TC58NVG1S3BFT00/TC58NVG1S8BFT00 The TC58NVG1SxB |
Toshiba |
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2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
Toshiba |
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2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
Toshiba |
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2 GBIT (256M x 8 BIT) CMOS NAND E2PROM • Organization Memory cell array Register Page size Block size • x8 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Pa |
Toshiba |
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2 GBIT (256M x 8 BIT) CMOS NAND E2PROM Organization Memory cell array Register Page size Block size x8 2176 128K 8 2176 8 2176 bytes (128K 8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi P |
Toshiba |
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2-GBIT (256M x 8 BIT) CMOS NAND E2PROM Organization Memory cell array Register Page size Block size x8 2176 128K 8 2176 8 2176 bytes (128K 8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi P |
Toshiba |
