tetrode Datasheet | Specifications & PDF Download

Svetlana EL509 / EL519 / 6KG6 High Performance Beam Power Tetrode The Svetlana EL509 is a beam power tetrode intended for use in class A, AB or B audi

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KT88 max 52,0 max 110,0 max 125,0 Base: OCTAL Uf = 6,3 V If = 1,6 A Typical Characteristics: Ua = 250 U = 250 g2 I = 140 a I = max. 7 g2 Ug1

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Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. L

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BF961 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling.

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BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precaution

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SVETLANA TECHNICAL DATA EL509/6KG6 High Performance Beam Power Tetrode T he Svetlana EL509/6KG6 is a beam power tetrode intended for use in class A,

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BF1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasin

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page 1 2 3 4 5 6 7 ECL11 sheet 010342-a 010342-b 020342-a 020342-b 030342-a 030342-b FP date 1942 1942 1942 1942 1942 1942 2000.03.05

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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page 1 2 3 ECL11 sheet 1 2 FP date 1948.09.14 1948.09.14 1999.06.26

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

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Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. L

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BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing

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