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10N65F - GaN Enhancement-mode Power Transistor
GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Featu.CID10N65F - GaN Enhancement-mode Power Transistor
GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Featu.TJA1040T - High-speed CAN transceiver
High-speed CAN transceiver FEATURES ➢ Fully compatible with the ISO 11898 standard ➢ Thermally protected ➢ Input levels compatible with 3.3 V and 5 V .AD620ARZ-REEL - Low Cost Precision Instrument Amplifier
AD620ARZ-REEL 、 1 10,000 :93 dB min,G = 10 :125 µ V () :0.3 µ V/° C :0.5 nA () :8 nV/√Hz :2 µ VP- P (0.1 10 Hz, G = 1) :625 kHz .CID10N65D - GaN Enhancement-mode Power Transistor
CID10N65D GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Packa.CID18N65D5 - GaN Enhancement-mode Power Transistor
CID18N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Pack.TPS54540D - High Efficiency Synchronous Step-down DCDCConverter
TPS54540DDAR 3.8V-36V Vin, 5A, High Efficiency Synchronous Step-down DCDC Converter with Programmable Frequency FEATURES Wide Input Range: 3.8V-36.TPS54540DDAR - High Efficiency Synchronous Step-down DCDCConverter
TPS54540DDAR 3.8V-36V Vin, 5A, High Efficiency Synchronous Step-down DCDC Converter with Programmable Frequency FEATURES Wide Input Range: 3.8V-36.STD3NK90ZT4 - Silicon N-Channel Power MOSFET
Silicon N -Channel Power MOSFET STD3NK90ZT4 Features: VDSS 900 V Fast Switching Low Gate Charge and Rdson Low Reverse transfer capacitance.RT6200G - 600mA Synchronous Step-down DCDC Converter
RT6200G 4.5V-40V Vin, 600mA Synchronous Step-down DCDC Converter FEATURES Wide Input Range: 4.5V-40V Up to 600mA Continuous Output Current Less.CI770-100A - Current Transducer
Current Transducer Current Transducer CI770-100A Features Safety Hall effect measuring principle AISC Output proportional to power supply va.CI19N120SM - SIC MOSFET
SIC MOSFET Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Driv.CID9N65D5 - GaN Enhancement-mode Power Transistor
CID9N65D5 GaN Enhancement-mode Power Transistor Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency .CID9N65E3 - GaN Enhancement-mode Power Transistor
GaN Enhancement-mode Power Transistor CID9N65E3 Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency .CID10N65D5 - GaN Enhancement-mode Power Transistor
CID10N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Pack.CI5931-65A - Current Sensor
High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE.CI5931-50A - Current Sensor
High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE.CI5931-40A - Current Sensor
High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE.CI5931-30A - Current Sensor
High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE.CI5931-20A - Current Sensor
High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE.