tokmas Datasheet | Specifications & PDF Download

36002dc8-79707dfb-44420c97-fd56264f SiC Schottky Barrier Diode CI02S120E3 Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • Hig

Rating: 1 ★ (4 votes)

SiC Schottky Barrier Diode CI04S65E3 Features • 650-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Curr

Rating: 1 ★ (4 votes)

GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Featu

Rating: 1 ★ (3 votes)

CID10N65D GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Packa

Rating: 1 ★ (3 votes)

CID18N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Pack

Rating: 1 ★ (3 votes)

Silicon N -Channel Power MOSFET STD3NK90ZT4 Features： VDSS 900 V  Fast Switching  Low Gate Charge and Rdson  Low Reverse transfer capacitance

Rating: 1 ★ (3 votes)

RT6200G 4.5V-40V Vin, 600mA Synchronous Step-down DCDC Converter FEATURES  Wide Input Range: 4.5V-40V  Up to 600mA Continuous Output Current  Less

Rating: 1 ★ (3 votes)

SIC MOSFET Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Driv

Rating: 1 ★ (3 votes)

AD620ARZ-REEL 、  1 10,000  ：93 dB min，G = 10  ：125 µ V ()  ：0.3 µ V/° C  ：0.5 nA ()  ：8 nV/√Hz  ：2 µ VP- P (0.1 10 Hz, G = 1)  ：625 kHz

Rating: 1 ★ (3 votes)

GaN Enhancement-mode Power Transistor CID18N65D Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

Rating: 1 ★ (3 votes)

CID45N65MD 650V GaN Enhancement-mode Power Transistor Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching fre

Rating: 1 ★ (3 votes)

CID9N65D5 GaN Enhancement-mode Power Transistor Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

Rating: 1 ★ (2 votes)

GaN Enhancement-mode Power Transistor CID9N65E3 Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

Rating: 1 ★ (2 votes)

CID10N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Pack

Rating: 1 ★ (2 votes)

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

Rating: 1 ★ (2 votes)

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

Rating: 1 ★ (2 votes)

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

Rating: 1 ★ (2 votes)

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

Rating: 1 ★ (2 votes)

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

Rating: 1 ★ (2 votes)

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

Rating: 1 ★ (2 votes)