tokmas Datasheet | Pinout, Features, Price Comparison & PDF

GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Featu

TPS54540DDAR 3.8V-36V Vin, 5A, High Efficiency Synchronous Step-down DCDC Converter with Programmable Frequency FEATURES  Wide Input Range: 3.8V-36

GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Featu

High-speed CAN transceiver FEATURES ➢ Fully compatible with the ISO 11898 standard ➢ Thermally protected ➢ Input levels compatible with 3.3 V and 5 V

CID45N65MD 650V GaN Enhancement-mode Power Transistor Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching fre

TPS54540DDAR 3.8V-36V Vin, 5A, High Efficiency Synchronous Step-down DCDC Converter with Programmable Frequency FEATURES  Wide Input Range: 3.8V-36

GaN Enhancement-mode Power Transistor CID9N65E3 Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

CID10N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Pack

AD620ARZ-REEL 、  1 10,000  ：93 dB min，G = 10  ：125 µ V ()  ：0.3 µ V/° C  ：0.5 nA ()  ：8 nV/√Hz  ：2 µ VP- P (0.1 10 Hz, G = 1)  ：625 kHz

GaN Enhancement-mode Power Transistor CID18N65D Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

CID10N65D GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Packa

RT6200G 4.5V-40V Vin, 600mA Synchronous Step-down DCDC Converter FEATURES  Wide Input Range: 4.5V-40V  Up to 600mA Continuous Output Current  Less

CID9N65D5 GaN Enhancement-mode Power Transistor Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

CID18N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Pack

SIC MOSFET Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Driv

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE