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GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Featu

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CID10N65D GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Packa

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CID45N65MD 650V GaN Enhancement-mode Power Transistor Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching fre

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CID18N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Pack

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High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

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SiC Schottky Barrier Diode CI04S65E3 Features • 650-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Curr

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TPS54540DDAR 3.8V-36V Vin, 5A, High Efficiency Synchronous Step-down DCDC Converter with Programmable Frequency FEATURES  Wide Input Range: 3.8V-36

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GaN Enhancement-mode Power Transistor CID18N65D Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

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GaN Enhancement-mode Power Transistor CID10N65F General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package Featu

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Silicon N -Channel Power MOSFET STD3NK90ZT4 Features： VDSS 900 V  Fast Switching  Low Gate Charge and Rdson  Low Reverse transfer capacitance

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AD620ARZ-REEL 、  1 10,000  ：93 dB min，G = 10  ：125 µ V ()  ：0.3 µ V/° C  ：0.5 nA ()  ：8 nV/√Hz  ：2 µ VP- P (0.1 10 Hz, G = 1)  ：625 kHz

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High-speed CAN transceiver FEATURES ➢ Fully compatible with the ISO 11898 standard ➢ Thermally protected ➢ Input levels compatible with 3.3 V and 5 V

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RT6200G 4.5V-40V Vin, 600mA Synchronous Step-down DCDC Converter FEATURES  Wide Input Range: 4.5V-40V  Up to 600mA Continuous Output Current  Less

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GaN Enhancement-mode Power Transistor CID9N65E3 Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

(12 views)

CID10N65D5 GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Pack

(12 views)

High Performance, Hall Effect-Based Current Sensor IC with a Low-Resistance Conductor 10 A / 2 0 A / 3 0 A / 4 0 A / 5 0 A / 6 5 A /s5e0rAies FEATURE

(12 views)

TPS54540DDAR 3.8V-36V Vin, 5A, High Efficiency Synchronous Step-down DCDC Converter with Programmable Frequency FEATURES  Wide Input Range: 3.8V-36

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36002dc8-79707dfb-44420c97-fd56264f SiC Schottky Barrier Diode CI02S120E3 Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • Hig

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Current Transducer Current Transducer CI770-100A Features Safety  Hall effect measuring principle  AISC  Output proportional to power supply va

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SIC MOSFET Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Driv

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