u06 Datasheet | Specifications & PDF Download

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www.DataSheet4U.com MLC ▪ CHIP ▪ CAPACITOR Pan Overseas X7R DIELECTRIC – GENERAL SPECIFICATION INTRODUCTION¡G The X7R (BX) has moderate K value an

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www.DataSheet4U.com MLC ▪ CHIP ▪ CAPACITOR Pan Overseas X7R DIELECTRIC – GENERAL SPECIFICATION INTRODUCTION¡G The X7R (BX) has moderate K value an

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www.DataSheet4U.com MLC ▪ CHIP ▪ CAPACITOR Pan Overseas X7R DIELECTRIC – GENERAL SPECIFICATION INTRODUCTION¡G The X7R (BX) has moderate K value an

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CMD06N02N /CMU06N02N N-Ch 20V Fast Switching MOSFETs General Description Product Summery The 06N02 is N-channel MOSFET device that features a low

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tSsmi-Conaucto'i ZPioaueti, Line. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U05 (SILICON) MPS-U06 TELEPHONE: (973) 376-2922 (212)227-6

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TPD1E05U06, TPD4E05U06, TPD6E05U06 SLVSBO7O – DECEMBER 2012 – REVISED AUGUST 2024 TPDxE05U06 1, 4, 6 Channel ESD Protection Device for Super-Speed (Up

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D56/ www.daysemi.jp N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0041 at VGS = 10 V 0.0059 at VGS = 4.5 V ID (A)a, g 60g

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N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC VCES Vcesat-ty（p Vge=15V） 60 A 600V 1.9V   PFC  APPLICATIONS  Welding

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TPD1E05U06, TPD4E05U06, TPD6E05U06 SLVSBO7O – DECEMBER 2012 – REVISED AUGUST 2024 TPDxE05U06 1, 4, 6 Channel ESD Protection Device for Super-Speed (Up

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CMD06N03 /CMU06N03 N-Ch 30V Fast Switching MOSFETs General Description The 06N03 is the highest performance trench N-ch MOSFETs with extreme high ce

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