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White Electronic Designs WV3EG264M64EFSU-D4 PRELIMINARY* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES PC2700 @ CL2.5 Double-data-rate architecture B

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White Electronic Designs WV3EG265M64EFSU-D4 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL FEATURES Double-data-rate architecture PC2700 and PC2100 Bi-d

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (I

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W25X16, W25X16A, W25X32, W25X64 16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: May

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White Electronic Designs WV3EG216M64STSU-D4 PRELIMINARY* 256MB – 2x16Mx64 DDR SDRAM UNBUFFERED FEATURES Double-data-rate architecture PC2700@CL=2.5

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White Electronic Designs WV3EG232M64EFSU-D4 ADVANCED* 512MB – 2x32Mx64 DDR SDRAM, UNBUFFERED, w/PLL, FBGA FEATURES Fast data transfer rate: PC-2100

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White Electronic Designs WV3EG264M72ESFR-D4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES 200-pin SO-DIMM, dual in-line memory modul

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GenX3TM 600V IGBT with Diode Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGK64N60B3D1 IXGX64N60B3D1 VCES IC110 VCE(sat) tfi(typ) = 600V = 64

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White Electronic Designs WV3EG265M72EFSU-D4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA FEATURES Unbuffered 200-pin (SO-DIMM), small-o

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White Electronic Designs WV3EG232M64STSU-D4 PRELIMINARY* 512MB – 2x32Mx64 DDR SDRAM UNBUFFERED FEATURES PC2700 @ CL2.5 Double-data-rate architecture

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W25X64BV 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI The W25Q64BV is recommended for all new 64Mb designs. The W25X64BV is avail

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White Electronic Designs 256MB – 32Mx64 DDR SDRAM UNBUFFERED FEATURES Double-data-rate architecture DDR200, DDR266, DDR333 and DDR400 • JEDEC design s

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W25X16, W25X16A, W25X32, W25X64 16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: May

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Typ

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W25X16, W25X16A, W25X32, W25X64 16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: May

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Typ

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White Electronic Designs 16Mx64 DDR SDRAM FEATURES DDR Data Rate = 200, 250, 266Mbps Package: • 219 Plastic Ball Grid Array (PBGA), 21 x 25mm 2.5V ±0.

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White Electronic Designs W3EG264M72AFSRxxxD3 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA FEATURES Double-data-rate architecture DD

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W25X16, W25X16A, W25X32, W25X64 16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: May

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