BDX64 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

BDX64

Manufacturer:

Inchange Semiconductor

File Size:

213.33kb

Download:

📄 Datasheet

Description:

Silicon pnp darlington power transistor.

Collector Current -IC= -12A

High DC Current Gain-hFE= 1000(Min)@ IC= -5A

Complement to Type BDX65/A/B/C

BDX64 Application

• Applications
• Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P

TAGS

BDX64

Inchange Semiconductor

📁 Related Datasheet

BDX60 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V (Min) ·High Current Capability ·Wide area of safe .

BDX61 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Current Capability ·Wide area of safe .

BDX62 - Silicon PNP Darlington Power Transistor (Inchange Semiconductor)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type.

BDX62 - PNP SILICON DARLINGTONS (Comset Semiconductors)
BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power d.

BDX62A - Silicon PNP Darlington Power Transistor (Inchange Semiconductor)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type.

BDX62A - PNP SILICON DARLINGTONS (Comset Semiconductors)
BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power d.

BDX62B - Bipolar PNP Device (Seme LAB)
BDX62B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP.

BDX62B - Silicon PNP Darlington Power Transistor (Inchange Semiconductor)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type.

BDX62B - PNP SILICON DARLINGTONS (Comset Semiconductors)
BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power d.

BDX62C - Bipolar PNP Device (Seme LAB)
BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP.