| Part Number | BDV67B |
| Manufacturer | Comset Semiconductors |
| Title | NPN SILICON DARLINGTONS POWER TRANSISTORS |
| Description | BDV67-A-B-C-D NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio ... |
| Features |
et/
Value
Unit
PT
Power Dissipation
@ Tmb = 25° C
200
W
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
THERMAL CHARACTERISTICS Symbol
RthJ-mb
Ratings
Thermal Resistance, Junction to Mounting Base
Value
0.625
Unit
°C...
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| Datasheet |
 BDV67B Datasheet
|
