| Part Number | FDFMA2P857 |
| Manufacturer | Fairchild Semiconductor |
| Title | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| Description | This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applic... |
| Features |
MOSFET:
Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A General Description This device is designed specifically as a single package solution for the ... |
| Datasheet |
 FDFMA2P857 Datasheet
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