| Part Number | FDFMA2P859T |
| Manufacturer | Fairchild Semiconductor |
| Title | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| Description | This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appli... |
| Features |
MOSFET:
Max rDS(on) = 120 m: at VGS = –4.5 V, ID = –3.0 A Max rDS(on) = 160 m: at VGS = –2.5 V, ID = –2.5 A Max rDS(on) = 240 m: at VGS = –1.8 V, ID = –1.0 A July 2009 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Descri... |
| Datasheet |
 FDFMA2P859T Datasheet
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