logo

BD676A

INCHANGE
Part Number BD676A
Manufacturer INCHANGE
Title PNP Transistor
Description ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -45 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD675A ·Minimum Lot-to-...
Features CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -40mA VBE(on) Base-Emitter On Voltage IC= -2A; VC...

Datasheet PDF File BD676A Datasheet

BD676A   BD676A   BD676A  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map