| Part Number | BD827 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD828 ·Minimum Lot-to... |
| Features |
iscsemi is registered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD827
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB=...
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| Datasheet |
 BD827 Datasheet
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