| Part Number | BF1009S |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Title | Silicon N-Channel MOSFET Tetrode |
| Description | BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated bia... |
| Features |
ctrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 300 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 G...
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| Datasheet |
 BF1009S Datasheet
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