| Part Number | FDS6673BZ |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | P-Channel MOSFET |
| Description | This P−Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on−state resistan... |
| Features |
• Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A • Max RDS(on) = 12 mW @ VGS = −4.5 V, ID = −12 A • Extended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Level of 6.5 kV Typical (Note 3) • High Performance Trench Technology for E... |
| Datasheet |
 FDS6673BZ Datasheet
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