| Part Number | BF1005S |
| Manufacturer | Siemens Semiconductor Group |
| Title | Silicon N-Channel MOSFET Tetrode |
| Description | BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabil... |
| Features |
characteristics Drain-source breakdown voltage typ. 100 13 1 max. 12 13 50 800 -
Unit
V(BR)DS
±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS
12 8 8 -
V
I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage
±I G1S = 10 mA, VG2S = V ...
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| Datasheet |
 BF1005S Datasheet
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