| Part Number | BF1012S |
| Manufacturer | Siemens Semiconductor Group |
| Title | Silicon N-Channel MOSFET Tetrode |
| Description | BF 1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabil... |
| Features |
characteristics Drain-source breakdown voltage typ. 12 0.9 max. 12 16 60 50 500 -
Unit
V(BR)DS
±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS
16 8 10 8 -
V
I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage
±I G1S = 10 mA, VG2S ...
|
| Datasheet |
 BF1012S Datasheet
|
