| Part Number | WFN1N60 |
| Manufacturer | Winsemi |
| Title | Silicon N-Channel MOSFET |
| Description | Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology. This latest technology has been especially designed to... |
| Features |
� � � � � 1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is produced using Winse mi’s advan ced... |
| Datasheet |
 WFN1N60 Datasheet
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