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IC62LV12816L Datasheet Preview

IC62LV12816L Datasheet

ULTRA LOW POWER CMOS STATIC RAM

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IC62LV12816L pdf
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IICC626LV21L2V8116L2816L
IICC626LV21L2V8116L2L 816LL
128K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
.EATURES
• High-speed access times: 55, 70, 100 ns
• CMOS low power operation
-- 60 mW (typical) operating
-- 3 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.7V-3.6V Vcc power supply
• .ully static operation: no clock or refresh re-
quired
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP-2 and 48-pin
6*8mm T.-BGA
DESCRIPTION
The 1+51 IC62LV12816L and IC62LV12816LL are high-speed,
2.097,152-bit static RAMs organized as 131,072 words by 16
bits. They are fabricated using 1+51's high-performance CMOS
technology. This highly reliable process coupled with innova-
tive circuit design techniques, yields high-performance and
low power consumption devices.
When CE is HIGH (deselected) or when CE is low and both LB
and UB are HIGH, the device assumes a standby mode at
which the power dissipation can be reduced by using CMOS
input levels.
Easy memory expansion is provided by using Chip Enable
Output and Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IC62LV12816L and IC62LV12816LL are packaged in the
JEDEC standare 44-pin 400mil TSOP-2 and 48-pin 6*8mm
T.-BGA.
.UNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE CONTROL
WE CIRCUIT
UB
LB
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
LPSR011-0B 06/06/2001
1



ICSI
ICSI

IC62LV12816L Datasheet Preview

IC62LV12816L Datasheet

ULTRA LOW POWER CMOS STATIC RAM

No Preview Available !

IC62LV12816L pdf
IC62LV12816L
IC62LV12816LL
PIN CON.IGURATIONS
44-Pin TSOP-2
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A5
43 A6
42 A7
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 GND
33 Vcc
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 NC
27 A8
26 A9
25 A10
24 A11
23 NC
48-Pin T.-BGA
1 23 45 6
A LB OE A0 A1 A2 N/C
B I/O8 UB A3 A4 CE I/O0
C I/O9 I/O10 A5
A6 I/O1 I/O2
D GND I/O11 NC A7 I/O3 Vcc
E Vcc I/O12 NC
A16 I/O4 GND
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H
NC A8
A9 A10 A11 NC
PIN DESCRIPTIONS
A0-A16
Address Inputs
I/O0-I/O15 Data Input/Output
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB
UB
NC
Vcc
GND
Lower-byte Control (l/O0-I/O7)
Upper-byte Control (l/O8-I/O15)
No Connection
Power
Ground
TRUTH TABLE
Mode
WE CE OE LB UB
I/O PIN
I/O0/-I/O7 I/O8-I/O15 Vcc Current
Not Selected X H X X X
X L XH H
Output Disabled H L H X X
X L XH H
Read
H L LL H
H L LH L
H L LL L
Write
L L XL H
L L XH L
L L XL L
High-Z
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
High-Z
High-Z
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
ISB, ISB
ISB, ISB
ICC
ISB
ICC
ICC
2 Integrated Circuit Solution Inc.
LPSR011-0B 06/06/2001


Part Number IC62LV12816L
Description ULTRA LOW POWER CMOS STATIC RAM
Maker ICSI
Total Page 10 Pages
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IC62LV12816L pdf
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