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  ON Semiconductor Electronic Components Datasheet  

80N02 Datasheet

NTD80N02

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80N02 pdf
NTD80N02
Power MOSFET
24 V, 80 A, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
www.DataSheet4TUy.pcoicmal Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TC = 25°C
Drain Current − Single Pulse (tp = 10 ms)
Total Power Dissipation @ TC = 25°C
Operating and Storage
Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
24
±20
80*
200
75
−55 to
150
Vdc
Vdc
Adc
Watts
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 24 Vdc, VGS = 10 Vdc,
IL = 17 Apk, L = 5.0 mH, RG = 25 )
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RθJC
RθJA
RθJA
TL
733 mJ
°C/W
1.65
67
120
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.
http://onsemi.com
V(BR)DSS
24 V
RDS(on) TYP
5.0 mW
ID MAX
80 A
N−Channel
D
G
S
4
44
12
3
12
3
1 23
CASE 369AA CASE 369C CASE 369D
DPAK
DPAK
DPAK
(Surface Mount) (Surface Mount)(Straight Lead)
STYLE 2
STYLE 2
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
1
Gate
23
Drain Source
13
Gate 2 Source
Drain
Y
WW
80N02
= Year
= Work Week
= Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 4
1
Publication Order Number:
NTD80N02/D


  ON Semiconductor Electronic Components Datasheet  

80N02 Datasheet

NTD80N02

No Preview Available !

80N02 pdf
NTD80N02
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Positive Temperature Coefficient
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 24 Vdc)
(VGS = 0 Vdc, VDS = 24 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Negative Threshold Temperature Coefficient
www.DataSheet4US.ctoamtic Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 80 Adc)
(VGS = 4.5 Vdc, ID = 40 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)
VGS(th)
RDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 3)
DYNAMIC CHARACTERISTICS
gFS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
(VDS = 20 Vdc,
VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VGS = 4.5 Vdc,
VDD = 20 Vdc,
ID = 20 Adc,
RG = 2.5 )
(VGS = 4.5 Vdc,
ID = 20 Adc,
VDS = 20 Vdc) (Note 3)
td(on)
tr
td(off)
tf
QT
Q1
Q2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 40 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
VSD
trr
ta
tb
Qrr
Min Typ Max Unit
24 27
− 25
Vdc
− mV/°C
mAdc
− − 1.0
− − 10
− − ±100 nAdc
Vdc
1.0 1.9 3.0
− −3.8 − mV/°C
m
− 5.0 5.8
− 7.5 9.0
− 5.0 5.8
7.5 9.0
− 20 − Mhos
2250
2600
pF
− 900 1100
− 400 525
− 17 30 ns
− 67 125
− 28 45
− 40 75
− 30 42 nC
− 7.0 12
− 18 28
Vdc
− 0.92 1.2
− 1.05 −
− 0.70 −
− 38 52 ns
− 20 −
− 18 −
− 0.038 −
mC
http://onsemi.com
2


Part Number 80N02
Description NTD80N02
Maker ON Semiconductor
Total Page 8 Pages
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