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Toshiba Electronic Components Datasheet

1SS385FV Datasheet

Silicon Epitaxial Schottky Barrier Type Diode

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1SS385FV pdf
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV
1SS385FV
High-Speed Switching Applications
z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA
z Ultra-small package
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.2±0.05
0.8±0.05
1
23
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
IO
IFSM
P
Tj
100 *
1*
150**
125
mA
A
mW
°C
VESM
1. ANODE 1
2. ANODE 2
3. CATHODE
Storage temperature range
Tstg
55 to 125
°C
Operating temperature range
Topr 40 to 100 °C JEDEC
Note: Using continuously under heavy loads (e.g. the application of high JEITA
temperature/current/voltage and the significant change in
TOSHIBA
1-1Q1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
** : Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
0.18
V
0.23 0.30 V
0.35 0.50 V
― ― 20 μA
20 pF
Equivalent Circuit (Top View)
Marking
Start of commercial production
2005-02
1 2014-03-01


Toshiba Electronic Components Datasheet

1SS385FV Datasheet

Silicon Epitaxial Schottky Barrier Type Diode

No Preview Available !

1SS385FV pdf
1SS385FV
P – Ta
200
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mmt)
150
100
50
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
2 2014-03-01


Part Number 1SS385FV
Description Silicon Epitaxial Schottky Barrier Type Diode
Maker Toshiba
Total Page 3 Pages
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