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Toshiba Electronic Components Datasheet

TLP251 Datasheet

GaAlAs Ired & Photo-IC

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TLP251 pdf
TOSHIBA Photocoupler GaAAs Ired & Photo-IC
TLP251
Inverter For Air Conditioner
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
TLP251
Unit in mm
The TOSHIBA TLP251 consists of a GaAAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
z Input threshold current: IF=5mA(max.)
z Supply current (ICC): 11mA(max.)
z Supply voltage (VCC): 1035V
z Output current (IO): ±0.4A(max.)
z Switching time (tpLH / tpHL): 1μs(max.)
z Isolation voltage: 2500Vrms(min.)
z UL recognized: UL1577, file no.E67349
z Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage
: 4000VPK
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
TOSHIBA
1110C4
Weight: 0.54 g (typ.)
Pin Configuration (top view)
18
27
36
Truth Table
Input
LED
On
Off
Tr1
On
Off
Tr2
Off
On
45
1 : N.C. 5 : GND
2 : Anode 6 : VO (Output)
3 : Cathode 7 : N.C.
4 : N.C.
8 : VCC
Schematic
ICC
VCC
8
IF
2
(Tr 1)
VF
3
6
VO
IO
(Tr 2)
GND
5
A 0.1μF bypass capcitor must be connected
between pin 8 and 5(see Note 5).
1 2007-10-01


Toshiba Electronic Components Datasheet

TLP251 Datasheet

GaAlAs Ired & Photo-IC

No Preview Available !

TLP251 pdf
Absolute Maximum Ratings (Ta = 25°C)
TLP251
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating
IF
(Ta 70°C) ΔIF / ΔTa
20
0.36
mA
mA / °C
Peak transient forward current
Reverse voltage
Junction temperature
Hpeak output current
(PW 2.0μs, f 15kHz)
Lpeak output current
(PW 2.0μs, f 15kHz)
Output voltage
Supply voltage
Output voltage derating
(Ta 70°C)
Supply voltage derating
(Ta 70°C)
Junction temperature
Operating frequency
Operating temperature range
Storage temperature range
Lead soldering temperature(10s)
Isolation voltage (AC, 1min.,
R.H.60%)
(Note 1)
IFPT
VR
Tj
(Note 2)
IOPH
(Note 2)
(Ta 70°C)
(Ta = 85°C)
(Ta 70°C)
(Ta = 85°C)
IOPL
VO
VCC
ΔVO / ΔTa
ΔVCC / ΔTa
(Note 3)
Tj
f
Topr
Tstg
Tsol
(Note 4)
BVS
1
5
125
0.4
0.4
35
24
35
24
0.73
0.73
125
25
20~85
55~125
260
2500
A
V
°C
A
A
V
V
V / °C
V / °C
°C
kHz
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width PW 1μs, 300pps
Note 2: Expornential waveform
Note 3: Expornential waveform, IOPH 0.25A(2.0μs), IOPL +0.25A(2.0μs)
Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6,
7 and 8 shorted together.
Note 5: A ceramic capacitor(0.1μF)should be connected from pin 8 to pin 5 to stabilize the
operation of the high gain linear ampifier. Failure to provide the bypassing may impair the
swiching property.The total lead length between capacitor and coupler should not
exceed 1cm.
2 2007-10-01


Part Number TLP251
Description GaAlAs Ired & Photo-IC
Maker Toshiba Semiconductor
Total Page 7 Pages
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