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Toshiba Electronic Components Datasheet

TLP251F Datasheet

GaAlAs Ired & Photo−IC

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TLP251F pdf
TOSHIBA Photocoupler GaAAs Ired & PhotoIC
TLP251F
Inverter For Air Conditionor
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
TLP251F
Unit in mm
The TOSHIBA TLP251F consists of a GaAAs light emitting diode and a
integrated photodetector.
This unit is 8lead DIP package.
TLP251F is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
· Input threshold current: IF = 5mA (max.)
· Supply current: 11mA (max.)
· Supply voltage: 10~35V
· Output peak current: ±0.4A (max.)
· Switching time: tpHL, tpLH = 1µs (max.)
· Isolation voltage: 2500Vrms(min.)
· UL recognized: UL1577, file no. E67349
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92, certificate no. 87447
Maximum operating insulation voltage: 1140VPK
Highest permissible over voltage: 6000VPK
(Note 1) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
· Structural parameter
Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
TOSHIBA
1110C402
Weight: 0.54g
1 2002-09-25


Toshiba Electronic Components Datasheet

TLP251F Datasheet

GaAlAs Ired & Photo−IC

No Preview Available !

TLP251F pdf
Truth Table
Input
LED
On
Off
Tr1
On
Off
Tr2
Off
On
Pin Configuration (top view)
1
8
1: N.C.
2: Anode
2 7 3: Cathode
4: N.C.
3
6
5: GND
6: VO (output)
7: N.C.
4 5 8: VCC
Schmatic
2
VF
3
IF
(Note 2 ) A 0.1µF bypass capacitor must be connected between pin 8 and 5.
TLP251F
ICC
VCC
8
(Tr 1)
6
VO
IO
(Tr 2)
GND
5
2 2002-09-25


Part Number TLP251F
Description GaAlAs Ired & Photo−IC
Maker Toshiba Semiconductor
Total Page 3 Pages
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