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P0403BVG Datasheet Preview

P0403BVG Datasheet

N-Channel Enhancement Mode MOSFET

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P0403BVG pdf
P0403BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.5mΩ @VGS = 10V
ID
18A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
18
15
80
Avalanche Current
IAS 50
Avalanche Energy
L = 0.3mH
EAS
380
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
Lead Temperature(1/16” from case for 10 sec)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
REV 1.0
1 2014/9/19



UNIKC
UNIKC

P0403BVG Datasheet Preview

P0403BVG Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0403BVG pdf
P0403BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
30
1
1.6 3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 22A
VDS = 5V, ID = 25A
4.1 4.5
5.6 7.5
80 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
3670
1000
663
2.3
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 20A
VDS = 15V,RL = 15Ω,
ID @ 1A,VGS = 10V, RGEN = 6Ω
80
16
14.5
22
10
42
10
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(TA = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS,, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
2.5 A
1V
REV 1.0
2 2014/9/19


Part Number P0403BVG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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