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P0403BV Datasheet Preview

P0403BV Datasheet

N-Channel Enhancement Mode MOSFET

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P0403BV pdf
P0403BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.5mΩ @VGS = 10V
ID
18A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
18
15
70
Avalanche Current
IAS 42
Avalanche Energy
L = 0.1mH
EAS
87
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
Lead Temperature( 1/16" from case for 10 sec)
TL 275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
Ver 1.0
1 2012/4/16



UNIKC
UNIKC

P0403BV Datasheet Preview

P0403BV Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0403BV pdf
P0403BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 22A
VGS = 10V, ID = 25A
VDS = 10V, ID = 25A
30
1 1.65 3
±100
1
10
6.1 7.5
4.1 4.5
100
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
2170
476
310
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = 25A, VGS = 10V
45
9
11
Turn-On Delay Time2
td(on)
22
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V, RL = 15Ω
ID @ 1A, VGS = 10V, RGEN = 6Ω
10
42
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
2.5
1
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
Ver 1.0
2 2012/4/16


Part Number P0403BV
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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