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P0425AD Datasheet Preview

P0425AD Datasheet

N-Channel Enhancement Mode MOSFET

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P0425AD pdf
P0425AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
0.8Ω @VGS = 10V
ID
4A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
4
3
16
Avalanche Current
IAS 4
Avalanche Energy
L = 7.7mH
EAS
60
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
69
27
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.8
60
UNITS
°C / W
REV 1.0
1 2015/10/27



UNIKC
UNIKC

P0425AD Datasheet Preview

P0425AD Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0425AD pdf
P0425AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
250
2 2.9 4
±100
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V , TJ = 125 °C
VGS = 10V, ID = 2A
VDS = 10V, ID = 4A
1
10
0.6 0.8
10
DYNAMIC
Input Capacitance
Ciss
512
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
72
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 200V, VGS = 10V,
ID = 4A
VDD = 125V,
ID @ 2A, VGS = 10V, RGS = 6Ω
19
18
2
8
30
210
61
105
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 2A, VGS = 0V
4
1.6
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
103
370
2Independent of operating temperature.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2015/10/27


Part Number P0425AD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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