AAT7551 Datasheet | AAT

Description The AAT7551 is a dual low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using Analogic Tech's ultra-highdensity MOSFET process and space-saving, small outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package. Features - - - Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -2.7A @ 25°C Low On-Resistance: - 100mΩ @ VGS = -4.5V - 175mΩ @ VGS = -2.5V Dual SC70JW-8 Package Top View D1 8 D1 7 D2 6 D2 5 Applications - - - Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Symbol VDS VGS ID IDM IS TJ TSTG 1 S1 2 G1 3 S2 4 G2 Description Drain-Source Voltage Gate-Source Voltage .. Value -20 ±12 ±2.7 ±2.2 ±8 -0.6 -55 to 150 -55 to 150 Units Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C °C °C Thermal Characteristics1 Symbol RθJA RθJA2 RθJF PD Description Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot Maximum Power Dissipation TA = 25°C TA = 70°C Typ 132 83 60 Max 165 104 72 1.2...