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AAT7551 - P-Channel Power MOSFET

General Description

The AAT7551 is a dual low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets.

Key Features

  • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -2.7A @ 25°C Low On-Resistance:.
  • 100mΩ @ VGS = -4.5V.
  • 175mΩ @ VGS = -2.5V Dual SC70JW-8 Package Top View D1 8 D1 7 D2 6 D2 5.

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Datasheet Details

Part number AAT7551
Manufacturer AAT
File Size 128.85 KB
Description P-Channel Power MOSFET
Datasheet download datasheet AAT7551 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AAT7551 20V P-Channel Power MOSFET General Description The AAT7551 is a dual low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package. Features • • • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -2.7A @ 25°C Low On-Resistance: — 100mΩ @ VGS = -4.5V — 175mΩ @ VGS = -2.5V Dual SC70JW-8 Package Top View D1 8 D1 7 D2 6 D2 5 Applications • • • Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Absolute Maximum Ratings TA = 25°C, unless otherwise noted.