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5SDD11D2800 Datasheet Preview

5SDD11D2800 Datasheet

Rectifier Diode

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VRSM =
IF(AV)M =
IF(RMS) =
IFSM =
VF0 =
rF =
3000 V
1285 A
2019 A
15×103 A
0.933 V
0.242 m
Rectifier Diode
5SDD 11D2800
Very low on-state losses
Optimum power handling capability
Doc. No. 5SYA1166-00 Okt. 03
www.DataSheet4U.com
Blocking
Maximum rated values 1)
Parameter
Symbol Conditions
Repetetive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = -40...160°C
Non - repetetive peak reverse voltage VRSM f = 5 Hz, tp = 10ms, Tj = -40...160°C
Characteristic values
Parameter
Max. (reverse) leakage current
Symbol Conditions
IRRM
VRRM, Tj = 160°C
min typ
Value
2800
3000
Unit
V
V
max
30
Unit
mA
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Symbol Conditions
FM
a Device unclamped
a Device clamped
min
8
typ
10
max
12
50
100
Unit
kN
m/s2
m/s2
Characteristic values
Parameter
Symbol Conditions
min typ
Weight
m
0.3
Housing thickness
H
FM = 10 kN, Ta = 25 °C
25.5
Surface creepage distance
DS
33
Air strike distance
Da
18
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
26.5
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




ABB

5SDD11D2800 Datasheet Preview

5SDD11D2800 Datasheet

Rectifier Diode

No Preview Available !

On-state
Maximum rated values 1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M 50 Hz, Half sine wave, TC = 85 °C
Max. RMS on-state current IF(RMS)
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 10 ms, Tj = 160°C,
VR = 0 V
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 8.3 ms, Tj = 160°C,
VR = 0 V
www.DataSheeCt4hUa.craomcteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
VF IF = 1500 A, Tj = 160°C
V(T0)
rT
Tj = 160°C
IT = 1500...4500 A
5SDD 11D2800
min typ max Unit
1285 A
2019 A
15×103 A
1.125×106 A2s
16×103 A
1.066×106 A2s
min typ max Unit
1.3 V
0.933
V
0.242 m
Switching
Characteristic values
Parameter
Recovery charge
Symbol Conditions
Qrr diF/dt = -30 A/µs, VR = 100 V
IFRM = 1000 A, Tj = 160°C
min typ max Unit
2200 3000 µAs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1166-00 Okt. 03
page 2 of 6


Part Number 5SDD11D2800
Description Rectifier Diode
Maker ABB
PDF Download

5SDD11D2800 Datasheet PDF






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