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5SHY42L6530 Datasheet Preview

5SHY42L6530 Datasheet

Asymmetric Integrated Gate- Commutated Thyristor

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VDRM =
ITGQM =
ITSM =
V(T0) =
rT =
VDC-link =
6500 V
4200 A
26×103 A
2.0 V
0.54 m
4000 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 42L6530
PRELIMINARY
High snubberless turn-off rating
Wide temperature range
www.DataSheet4UH.coimgh electromagnetic immunity
Simple control interface with status feedback
AC or DC supply voltage
Option for series connection (contact factory)
Doc. No. 5SYA1246-00 Aug. 07
Blocking
Maximum rated values 1)
Parameter
Rep. peak off-state voltage
Symbol
VDRM
Conditions
Gate Unit energized, Note 1
Permanent DC voltage for VDC-link Ambient cosmic radiation at sea level
100 FIT failure rate of GCT
in open air. Gate Unit energized
Reverse voltage
Characteristic values
Parameter
VRRM
Symbol Conditions
Rep. peak off-state current IDRM
VD = VDRM, Gate Unit energized
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below -25 °C
min
min
typ
typ
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter
Symbol Conditions
min
Mounting force
Characteristic values
Parameter
Fm
Symbol Conditions
36
min
Pole-piece diameter
Dp ± 0.1 mm
Housing thickness
H
25.3
Weight
m
Surface creepage distance Ds
Anode to Gate
33
Air strike distance
Da Anode to Gate
10
Length
l ± 1.0 mm
Height
h ± 1.0 mm
Width IGCT
w ± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
typ
40
typ
85
439
40
173
max
6500
4000
Unit
V
V
17 V
max
50
Unit
mA
max
44
Unit
kN
max
25.8
2.9
Unit
mm
mm
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




ABB

5SHY42L6530 Datasheet Preview

5SHY42L6530 Datasheet

Asymmetric Integrated Gate- Commutated Thyristor

No Preview Available !

GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. average on-state
current
IT(AV)M
Half sine wave, TC = 85 °C,
Double side cooled
Max. RMS on-state current
Max. peak non-repetitive
surge on-state current
Limiting load integral
IT(RMS)
ITSM
I2t
tp = 3 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Max. peak non-repetitive
surge on-state current
Limiting load integral
www.DataSheeMt4Ua.xc.ompeak non-repetitive
surge on-state current
Limiting load integral
ITSM
I2t
ITSM
I2t
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Stray inductance between LD
GCT and antiparallel diode
Only relevant for applications with
antiparallel diode to the IGCT
Critical rate of rise of on-
state current
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
diT/dtcr
For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
Symbol Conditions
VT IT = 4000 A, Tj = 125 °C
V(T0)
rT
Tj = 125 °C
IT = 1000...5000 A
Turn-on switching
Maximum rated values 1)
Parameter
Critical rate of rise of on-
state current
Characteristic values
Parameter
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
(see Fig. 14, 15)
Symbol Conditions
diT/dtcr f = 0..500 Hz,Tj = 125 °C,IT = 3900 A
VD = 4000 V, ITM 5500 A
Symbol Conditions
tdon
tdon SF
tr
VD = 4000 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
Li = 4 µH
CCL = 20 µF, LCL = 0.3 µH
Eon
Turn-off switching (see Fig. 7, 8, 10, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. controllable turn-off
current
Max. controllable turn-off
current
Characteristic values
Parameter
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
ITGQM1
ITGQM2
VDM VDRM,
Tj = 125°C,
RS = 0.35 ,
CCL = 20 µF,
LCL 0.3 µH
VD = 4000 V
ton > 100µs
VD = 4000 V
40µs < ton < 100µs
Symbol Conditions
tdoff
tdoff SF
Eoff
VD = 4000 V, Tj = 125 °C
VDM VDRM, RS = 0.35
ITGQ = 4000 A, Li = 4 µH
CCL = 20 µF, LCL = 0.3 µH
min
min
min
min
min
min
5SHY 42L6530
typ max Unit
1270 A
2000
40×103
A
A
2.4×106 A2s
26×103 A
3.38×106 A2s
17×103 A
4.34×106 A2s
300 nH
200 A/µs
typ
3.8
1.9
0.48
max
4.1
2.0
0.54
Unit
V
V
m
typ max Unit
1000 A/µs
typ max Unit
4 µs
7 µs
1 µs
2.5 J
typ max Unit
4200 A
3900 A
typ max Unit
8 µs
7 µs
44 tbd J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1246-00 Aug. 07
page 2 of 9


Part Number 5SHY42L6530
Description Asymmetric Integrated Gate- Commutated Thyristor
Maker ABB
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