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ACE1512E - N-Channel MOSFET

Description

The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 8V.

It is ESD protected.

Features

  • VDS (V)=20V.
  • ID=6.5A (VGS=4.5V).
  • RDS(ON).

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Datasheet preview – ACE1512E

Datasheet Details

Part number ACE1512E
Manufacturer ACE Technology
File Size 325.09 KB
Description N-Channel MOSFET
Datasheet download datasheet ACE1512E Datasheet
Additional preview pages of the ACE1512E datasheet.

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Full PDF Text Transcription

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ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features • VDS (V)=20V • ID=6.5A (VGS=4.5V) • RDS(ON)<21mΩ (VGS=4.5V) • RDS(ON)<25mΩ (VGS=2.5V) • RDS(ON)<33mΩ (VGS=1.8V) • ESD Protected : 2000V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)*AC TA=25℃ TA=70℃ Drain Current (Pulsed)*B Power Dissipation TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Ratings Unit VDSS 20 V VGSS ±8 V 6.5 ID A 5.2 IDM 24 A 1 PD W 0.64 TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 VER 1.
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