ACE1512E Datasheet | ACE Technology

Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features - VDS (V)=20V - ID=6.5A (VGS=4.5V) - RDS(ON)<21mΩ (VGS=4.5V) - RDS(ON)<25mΩ (VGS=2.5V) - RDS(ON)<33mΩ (VGS=1.8V) - ESD Protected : 2000V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)- AC TA=25℃ TA=70℃ Drain Current (Pulsed)- B Power Dissipation TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Ratings Unit VDSS 20 V VGSS ±8 V A 5.2 IDM 24 A W 0.64 TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 VER 1.1 1 N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE1512EBMS + H Halogen - free Pb - free BMS : TSOT-23-3 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Drain-source breakdown voltage Zero gate voltage drain...