ACE Technology ACE1551A
The ACE1551A is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.| Part No. | ACE1551A |
|---|---|
| Datasheet | ACE1551A Download |
| Manufacturer |  ACE Technology |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V 20V/0.65A,RDS(ON)=1000mΩ@VGS=1.5V● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Power Management in Note book● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter VER 1.3 1 ACE1551A N-Channel Enhancement Mode MOSFET
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ VGSS ID ±12 0.65 V A Pulsed Drain Current IDM 4 A Continuous Source Current (Diode Conduction) IS 0.3 A Power Dissipation TA=25℃ PD 0.15 W Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC Packaging Type SOT-723 D D G GS Ordering information ACE1551A JM + H Halogen - free Pb - free JM : SOT-723 S VER 1.3 2ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise specified.
