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ACE1526B - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

ACE1526B uses advanced trench technology to provide excellent RDS(ON).

This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter.

Features

  • VDS (V) = -30V.
  • ID = -6A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V).
  • RDS(ON) < 80mΩ (VGS = -4.5V) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous).
  • AC Drain Current (Pulse).
  • B TA=25°C TA=70°C Power Dissipation TA=25°C TA=70°C Operating Temperature/ Storage Temperature Symbol VDSS VGSS ID IDM PD TJ//TSTG Max -30 ±20 -6 -4.8 -30 50 25 -55~150 Unit V V A A W ℃ Packaging Type TO-252 Ordering information ACE1526B X.

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Datasheet Details

Part number ACE1526B
Manufacturer ACE Technology
File Size 382.63 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet ACE1526B Datasheet
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Full PDF Text Transcription

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ACE1526B P-Channel Enhancement Mode Field Effect Transistor Description ACE1526B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features  VDS (V) = -30V  ID = -6A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V)  RDS(ON) < 80mΩ (VGS = -4.5V) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) *AC Drain Current (Pulse) *B TA=25°C TA=70°C Power Dissipation TA=25°C TA=70°C Operating Temperature/ Storage Temperature Symbol VDSS VGSS ID IDM PD TJ//TSTG Max -30 ±20 -6 -4.
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