ACE Technology ACE1526B
This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz.| Part No. | ACE1526B |
|---|---|
| Datasheet | ACE1526B Download |
| Manufacturer |  ACE Technology |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
DESCRIPTION
ACE1526B uses advanced trench technology to provide excellent RDS(ON).FEATURES
● VDS (V) = -30V● ID = -6A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V)
● RDS(ON) < 80mΩ (VGS = -4.5V)
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) *AC Drain Current (Pulse) *B TA=25°C TA=70°C Power Dissipation TA=25°C TA=70°C Operating Temperature/ Storage Temperature Symbol VDSS VGSS ID IDM PD TJ//TSTG Max -30 ±20 -6 -4.8 -30 50 25 -55~150 Unit V V A A W ℃ Packaging Type TO-252 Ordering information ACE1526B XX + H Halogen - free Pb - free YM : TO-252 VER 1.1 1 ACE1526B P-Channel Enhancement Mode Field Effect Transistor Electrical CharacteristicsTA=25℃, unless otherwise specified. Parameter Symbol Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V Gate Threshold Voltage Gate Leakage Current VGS(th) IGSS VGS=VGS, IDS=-250uA VGS=±20V, VDS=0V Drain-Source On-Resistance Forward Transconductance RDS(ON) gFS VGS=-10V, ID=-6A VGS=-4.5V, ID=-3A VDS=-10V,ID=-5.3A Diode Forward Voltage VSD IS=-1.7A, VGS=0V Switching Min.
