ACE Technology ACE1512E
The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V.| Part No. | ACE1512E |
|---|---|
| Datasheet | ACE1512E Download |
| Manufacturer |  ACE Technology |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It is ESD protected.FEATURES
● VDS (V)=20V● ID=6.5A (VGS=4.5V)
● RDS(ON)<21mΩ (VGS=4.5V)
● RDS(ON)<25mΩ (VGS=2.5V)
● RDS(ON)<33mΩ (VGS=1.8V)
● ESD Protected : 2000V
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)*AC TA=25℃ TA=70℃ Drain Current (Pulsed)*B Power Dissipation TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Ratings Unit VDSS 20 V VGSS ±8 V 6.5 ID A 5.2 IDM 24 A 1 PD W 0.64 TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 VER 1.1 1 ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE1512EBMS + H Halogen - free Pb - free BMS : TSOT-23-3ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise specified. Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Drain-source on-state resistance Forward transconductance Diode forward voltage Maximum body-diode continuous current Total gate charge...
