Datasheet4U Logo Datasheet4U.com

ACE1512E - N-Channel MOSFET

General Description

The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 8V.

It is ESD protected.

Key Features

  • VDS (V)=20V.
  • ID=6.5A (VGS=4.5V).
  • RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number ACE1512E
Manufacturer ACE Technology
File Size 325.09 KB
Description N-Channel MOSFET
Datasheet download datasheet ACE1512E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ACE1501 Arithmetic Controller Engine Fairchild Semiconductor
ACE1502 Arithmetic Controller Engine Fairchild Semiconductor
ACE1001 Arithmetic Controller Engine Fairchild Semiconductor
ACE1101 Arithmetic Controller Engine (ACEx) for Low Power Applications Fairchild Semiconductor
ACE1202 Arithmetic Controller Engine Fairchild Semiconductor

Other Datasheets by ACE Technology

Part Number Description
ACE150x PWM Step-Down DC/DC Converter
ACE1522B P-Channel Enhancement Mode Field Effect Transistor
ACE1526B P-Channel Enhancement Mode Field Effect Transistor
ACE1551A N-Channel MOSFET
ACE1020M N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features • VDS (V)=20V • ID=6.5A (VGS=4.5V) • RDS(ON)<21mΩ (VGS=4.5V) • RDS(ON)<25mΩ (VGS=2.5V) • RDS(ON)<33mΩ (VGS=1.8V) • ESD Protected : 2000V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)*AC TA=25℃ TA=70℃ Drain Current (Pulsed)*B Power Dissipation TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Ratings Unit VDSS 20 V VGSS ±8 V 6.5 ID A 5.2 IDM 24 A 1 PD W 0.64 TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 VER 1.