Datasheet4U Logo Datasheet4U.com

ACE5212A Datasheet - ACE Technology

N-Channel MOSFET

ACE5212A Features

* 20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V

* 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V

* 20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability Application

* Drivers

ACE5212A General Description

The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suit.

ACE5212A Datasheet (407.57 KB)

Preview of ACE5212A PDF

Datasheet Details

Part number:

ACE5212A

Manufacturer:

ACE Technology

File Size:

407.57 KB

Description:

N-channel mosfet.

📁 Related Datasheet

ACE5213A P-Channel MOSFET (ACE Technology)

ACE520 Dual 300mA High PSRR Linear Regulator (ACE Technology)

ACE5208 P-Channel Power MOSFET (ACE Technology)

ACE520C Dual 300mA High PSRR Linear Regulator (ACE Technology)

ACE522 36V Input Linear Regulator (ACE Technology)

ACE523C 250mA Low consumption Linear Regulator (ACE Technology)

ACE525 Linear Regulator (ACE Technology)

ACE525C Linear Regulator (ACE Technology)

ACE500C 300mA Low Consumption Linear Regulator (ACE Technology)

ACE500E Fast Transient Response LDO (ACE Technology)

TAGS

ACE5212A N-Channel MOSFET ACE Technology

Image Gallery

ACE5212A Datasheet Preview Page 2 ACE5212A Datasheet Preview Page 3

ACE5212A Distributor