Datasheet Summary
P-Channel Enhancement Mode MOSFET
Description The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
Features
- P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
- Super...