ACE Technology ACE5212A
The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.| Part No. | ACE5212A |
|---|---|
| Datasheet | ACE5212A Download |
| Manufacturer |  ACE Technology |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● 20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V● 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
● 20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability Application
● Drivers : Relays/Solenoids/Lamps/Hammers
● Power Supply Converter Circuits
● Load/Power Switching Cell Phones, Pagers VER 1.1 1 ACE5212A N-Channel Enhancement Mode MOSFET
