ACE Technology ACE5208
The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage. This device is suitable for use as a load switching application and a wide variety of other applications.| Part No. | ACE5208 |
|---|---|
| Datasheet | ACE5208 Download |
| Manufacturer |  ACE Technology |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Advanced trench MOSFET process technology● Ultra low on-resistance with low gate charge
APPLICATIONS
● PWM application● Load switch
● Battery charge in cellular handset
ABSOLUTE MAXIMUM RATINGS
Parameter Symb ol Max Unit Drain-Source Voltage Gate-Source Voltage VDSS -12 V VGS ±8 Drain Current-Continuous Drain Current-Pulsed (note 1) ID -6 A IDM -20 Power Dissipation (note 2, TA=25℃) Maximum Power Dissipation (note 3, TC=25℃) PD 1.5 W 12 Thermal Resistance from Junction to Ambient (note 4) RθJA Thermal Resistance from Junction to case (note 4) RθJC 83.3 ℃/W 10.4 Junction Temperature Storage Temperature TJ 150 ℃ TSTG -55~+150 Packaging Type VER 1.1 1 ACE5208 P
