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ACE5208 - P-Channel Power MOSFET

Description

The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage.

This device is suitable for use as a load switching application and a wide variety of other applications.

Features

  • Advanced trench MOSFET process technology.
  • Ultra low on-resistance with low gate charge.

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Datasheet preview – ACE5208

Datasheet Details

Part number ACE5208
Manufacturer ACE Technology
File Size 889.05 KB
Description P-Channel Power MOSFET
Datasheet download datasheet ACE5208 Datasheet
Additional preview pages of the ACE5208 datasheet.

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Full PDF Text Transcription

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ACE5208 P-Channel Power MOSFET Description The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage. This device is suitable for use as a load switching application and a wide variety of other applications. Features • Advanced trench MOSFET process technology • Ultra low on-resistance with low gate charge Applications • PWM application • Load switch • Battery charge in cellular handset Absolute Maximum Ratings Parameter Symb ol Max Unit Drain-Source Voltage Gate-Source Voltage VDSS -12 V VGS ±8 Drain Current-Continuous Drain Current-Pulsed (note 1) ID -6 A IDM -20 Power Dissipation (note 2, TA=25℃) Maximum Power Dissipation (note 3, TC=25℃) PD 1.
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