ADM100N10 Description
The ADM100N10 uses advanced trench technology and design to provide excellent charge.lt can be used in a wide variety of applications. RDS(ON) with low gate Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter mon Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounted on Large Heat Sink...
ADM100N10 Key Features
- Special process technology for high ESD capability
- High density cell design for ultra low RDS(ON)
- 100% EAS Guaranteed
- Optimized V(BR)DSS Ruggedness
- Lead-Free,RoHS pliant