Datasheet Details
| Part number | ADM2P06W |
|---|---|
| Manufacturer | ADV |
| File Size | 778.34 KB |
| Description | P-Channel MOSFET |
| Download | ADM2P06W Download (PDF) |
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| Part number | ADM2P06W |
|---|---|
| Manufacturer | ADV |
| File Size | 778.34 KB |
| Description | P-Channel MOSFET |
| Download | ADM2P06W Download (PDF) |
|
|
|
: The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current（1,4） TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain
ADV ADM2P06W P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V ID -2.
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