Datasheet Details
| Part number | ADM200N04 |
|---|---|
| Manufacturer | ADV |
| File Size | 1.45 MB |
| Description | N-Channel MOSFET |
| Datasheet | ADM200N04-ADV.pdf |
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Overview: ADV ADM200N04 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V ID 200A RDS(ON) (mΩ) 3.
| Part number | ADM200N04 |
|---|---|
| Manufacturer | ADV |
| File Size | 1.45 MB |
| Description | N-Channel MOSFET |
| Datasheet | ADM200N04-ADV.pdf |
|
|
|
: The ADM200N04 series MOSFETs is a new technology, which bines an innovative super junction technology and advance process.
This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter mon Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Ratings Unit 40 V ±20 175 °C -55 to 175 °C 200 A Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested（2） TC=25°C 758 A ID Continuous Drain Current（1） Silicon Limited 200 A Package Limited 135 A PD Maximum Power Dissipation TC=25°C 208 W Thermal Characteristics Symbol RthJC RthJA Parameter Thermal resistance junction-case max（1） Thermal resistance junction-ambient max（1） Ratings 0.7 63 Unit °C/W °C/W 1/6 .advsemi.
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