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ADM200N06 Datasheet N-channel MOSFET

Manufacturer: ADV

Overview:                         ADV     ADM200N06  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 198A RDS(ON) (mΩ) 3.

Datasheet Details

Part number ADM200N06
Manufacturer ADV
File Size 674.41 KB
Description N-Channel MOSFET
Datasheet ADM200N06-ADV.pdf

General Description

: The AM200N06 series MOSFETs is a new technology, which bines an innovative super junction technology and advance process.

This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.

Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter mon Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current(1,6) TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested(2

Key Features

  • Low gate input resistance.
  • High dv/dt and avalanche capabilities.
  • 100% EAS Guaranteed.
  • Advanced high cell density Trench technology.
  • Lead-Free,RoHS Compliant 1  2  3 .

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