ADM57N10 Description
The ADM57N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter mon Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounted on Large Heat Sink...
ADM57N10 Key Features
- Low Gate Charge for Fast Switching Application
- Low RDS(ON) to Minimize Conductive Loss
- 100% EAS Guaranteed
- Optimized V(BR)DSS Ruggedness
- Lead-Free,RoHS pliant