SSC8030GQ4 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch PC/NB DCDC conversion Pin configuration Bottom View Package Information SSC-1V0

Key Features

s.
VDS 30V VGS ±20V RDSon TYP 8 mR@10V 10mR@4V5 ID 19A.
General.

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SSC8030GQ4 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8030GQ4
Manufacturer	AFSEMI
File Size	320.98 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8030GQ4 Datasheet

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SSC8030GQ4 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8 mR@10V 10mR@4V5 ID 19A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Bottom View  Package Information SSC-1V0 Package: DFN3X3 http://www.afsemi.com 1/4 Analog Future SSC8030GQ4  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Repetitive avalanche energy L=0.