SSC8032GT4 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch PC/NB DCDC conversion Pin configuration Top View S D G Package Information Unit:

Key Features

s.
VDS 30V VGS ±20V RDSon TYP 12mR@10V 16mR@4V5 ID 56A.
General.

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SSC8032GT4 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8032GT4
Manufacturer	AFSEMI
File Size	159.71 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8032GT4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8032GT4 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 12mR@10V 16mR@4V5 ID 56A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Top View S D G  Package Information Unit: mm TO220 SSC-V1.0 http://www.afsemi.